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我们对能量从40keV～150keV,剂量从1×10~(15)离子/cm~2～1×10~(16)离子/cm~2砷离子注入〈111〉单晶硅,进行了H~+和He~+背散射沟道测量。样品经600℃、700℃、825℃热退火后,都未能满意地消除损伤,而经红宝石脉冲激光退火之后,能满意地消除损伤。对40keV剂量为1×10~(16)离子/cm~(275)As~+注入的硅样品,分别进行900℃、30分钟热退火和红宝石脉冲激光退火,而后分别测量了〈111〉轴向和〈110〉轴向背散射沟道谱,砷原子的替位率分别为90％和95％以上,同时对两种退火方式的样品,测量了〈111〉轴向的角分布,观察到在热退火情况下,杂质砷原子的角分布有变窄的现象,大约窄0.2°;脉冲激光退火杂质砷原子的角分布与硅原子的角分布重合得相当好。我们又在连续打七个激光脉冲的斑点上测量了表面砷原子浓度的横向分布,其形状近似于高斯分布。
We implanted single crystal silicon (111) with energy from 40 keV to 150 keV and dose from 1 × 10 15 ions / cm 2 to 1 × 10 16 ions / cm 2 arsenic ions, And He ~ + backscattered channel measurements. After the samples were annealed at 600 ℃, 700 ℃ and 825 ℃, the damage was not satisfactorily eliminated, but after the ruby laser annealing, the damage could be satisfactorily eliminated. Silicon samples infused with 40 keV dose of 1 × 10 ~ (16) ions / cm ~ (275) As ~ + were annealed at 900 ℃ for 30 min and pulsed with ruby laser respectively. And <110> axial backscattering channel spectra, the replacement ratios of arsenic atoms were above 90% and 95%, respectively. Meanwhile, for the two annealing methods, the axial distribution of <111> In the case of thermal annealing, the angular distribution of impurity arsenic atoms narrows to about 0.2 °. The angular distribution of arsenic atoms in pulsed laser annealing impurities coincides with the angular distribution of silicon atoms. We measured the lateral distribution of arsenic concentration on the surface of the spot where seven consecutive laser pulses were applied, and the shape approximates the Gaussian distribution.