论文部分内容阅读
Using the finite-element method,the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated.The effects of various parameters on the thermal characteristics are analysed,and the thicknesses of the A1N submount for both epi-up configuration and epi-down configuration are optimized.The obtained result provides a reference for the parameter selection of the package materials.