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1973年在A.F.Ioffe物理—技术学院成立了以I.A.SmirnoV教授为首的稀土研究小组。此小组的主要研究方向为稀土半导体的制备和研究,稀土半导体可应用于微电子学、激光器及记录装置,存储及光学信息处理。合成及制备许多稀土半导体薄膜和单晶的现代技术已经获得了发展。单晶是由布里曼(Bridgman)方法用于应炉生长的。可用几种方法制备薄膜:从三个独立源蒸发,急骤蒸发及射频溅射。最近几年已经从下列稀土化合物:RX、R_2X_3、R_3X_4、RB_6及固溶体,R_2X_3—R_3X_4、Sm_(1-x)R_x~(+3)X(R=稀土金属,X=S、Se、Te)获得薄膜及单晶,有几种
In 1973, the A.F.Ioffe Institute of Physics and Technology established a rare earth research group led by Professor I.A.SmirnoV. The group’s main research direction is the preparation and research of rare earth semiconductors, rare earth semiconductors can be applied to microelectronics, lasers and recording devices, storage and optical information processing. Modern technologies for synthesizing and preparing many rare earth semiconductor thin films and single crystals have been developed. Single crystal is used by Bridgman method for furnace growth. Thin films can be made in several ways: evaporation from three independent sources, flash evaporation, and radio frequency sputtering. In recent years, rare earth compounds have been synthesized from the following rare earth compounds: RX, R_2X_3, R_3X_4, RB_6 and solid solutions, R_2X_3-R_3X_4, Sm_ (1-x) R_x ~ (+3) X (R = rare earth metals, X = S, Se, Te) There are several types of films and single crystals available