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两温区气相输运法合成ZnGeP2多晶过程中,易生成一些高熔点的杂质,导致合成材料的纯度较低。选取ZnGeP2多晶合成过程中几个重要温度的合成产物,进行X射线衍射(XRD)和能谱色散分析(EDS),结果表明:ZnGeP2多晶合成过程的中间生成物主要为Zn3P2、ZnP2和GeP等。根据分析结果,对合成工艺进行了改进,合成出外观完整、内部致密的ZnGeP2多晶锭。用XRD进行分析,结果表明:改进工艺后合成的是高纯单相ZnGeP2多晶材料,为高质量单晶体生长奠定了可靠基础。
In the ZnGeP2 polycrystal synthesized by gas phase transport method in two temperature zones, some high melting point impurities are easily formed, resulting in lower purity of the synthetic material. The synthesis products of ZnGeP2 polycrystal were selected and analyzed by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results show that the intermediate products of ZnGeP2 polycrystal synthesis are mainly Zn3P2, ZnP2 and GeP Wait. According to the results of the analysis, the synthesis process was improved to synthesize a polycrystalline ZnGeP2 ingot with complete appearance and compact internal structure. The results of XRD analysis show that the high purity single-phase ZnGeP2 polycrystalline material synthesized by the improved process lays a solid foundation for the high-quality single crystal growth.