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在象256k DRAM这样的较高密度的RAM中,由较大的管芯尺寸引起的较低成品率需要应用一种或者能够减小管芯尺寸,或者能够提供冗余特性的技术。 采用双层A1结构已经得到了一种芯片面积很小的256kDRAM(34mm~2)。这种DRAM采用1.3μm最小设计规
In higher density RAMs like 256k DRAM, the lower yield caused by the larger die size requires the application of one technique that either reduces the die size or provides redundancy. A double-layer A1 structure has been obtained with a chip area of 256kDRAM (34mm ~ 2). This DRAM uses a 1.3μm minimum design rule