论文部分内容阅读
近红外单光子读取电路读取盖革模式下的雪崩光电二极管雪崩信号。采用两个ps级的可编程ECL延时芯片,获得可调的门控脉冲,控制雪崩光电二极管(APD)死时间和淬灭雪崩信号,同时减少后脉冲的影响。详细介绍了门控脉冲产生模块、死时间控制模块以及雪崩信号提取电路。主要采用延迟鉴别、边沿锁存的方法提取雪崩光电二极管雪崩信号。在整个实验过程中,雪崩光电二极管工作温度为-55℃,脉冲宽度10ns,门控频率1MHz和10MHz,激光器激光波长1550nm,单光子探测器是PGA-400InGaAs雪崩光电二极管。
NIR single photon read circuit reads avalanche photodiode avalanche signal in Geiger mode. Programmable ECL delay chip with two ps levels to get an adjustable gated pulse, control the APD dead time and quench the avalanche signal while reducing the effects of the post-pulse. Gated pulse generation module, dead time control module and avalanche signal extraction circuit are introduced in detail. The main use of delay identification, edge latch method to extract avalanche photodiode avalanche signals. Throughout the experiment, the working temperature of the avalanche photodiode is -55 ℃, the pulse width is 10ns, the gate frequency is 1MHz and 10MHz, the laser wavelength is 1550nm, and the single photon detector is PGA-400InGaAs avalanche photodiode.