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在研制RTD经验的基础上设计并研制成功栅型GaAs基共振隧穿晶体管(GRTT).文中对该器件的材料结构设计、器件结构设计、光刻版图设计、器件制作、参数测量与分析等进行了系统的描述.所研制出的GRTT最大PVCR为46,最大跨导为8mS,为进一步改善器件性能和参数奠定了基础.
Based on the experience of developing RTD, we design and develop a successful gate-type GaAs-based resonant tunneling transistor (GRTT). The material structure design, device structure design, lithographic layout design, device fabrication, parameter measurement and analysis The system has been described.The developed GRTT has a maximum PVCR of 46 and a maximum transconductance of 8mS, which lays the foundation for further improvement of device performance and parameters.