论文部分内容阅读
采用高功率脉冲磁控溅射与直流磁控溅射并联的复合高功率脉冲磁控溅射技术,研究直流磁控溅射部分耦合直流电流变化对Ti靶在Ar气氛中放电及等离子体特性的影响.采用表面轮廓仪、扫描探针显微镜、X射线衍射与纳米压痕仪对Ti薄膜厚度、结构特征以及力学性能进行表征.结果表明:耦合直流电流增加,靶平均功率增加,脉冲作用期间靶电流降低,等离子体电子密度增加;在耦合直流电流为2.0A时,等离子体电子密度和电子温度获得较大值,分别为2.98 V和0.93 eV;耦合直流电流增加,Ti薄膜沉积速率近似线性增加,粗糙度增加,硬度和弹性模量略有降低;相同靶平均功率时,采用复合高功率脉冲磁控溅射技术制备Ti薄膜与采用传统直流磁控溅射技术相比,沉积速率相当;靶平均功率650W时复合高功率脉冲磁控溅射所制Ti薄膜比传统直流磁控溅射所制Ti薄膜更加光滑,平均粗糙度降低1.32 nm,力学性能更加优异,硬度提高2.68GPa.
High-power pulsed magnetron sputtering and DC magnetron sputtering in parallel with high-power pulsed magnetron sputtering technology to study the DC magnetron sputtering part of the coupled DC current changes in the Ti target in the Ar atmosphere discharge and plasma properties The thickness, structure and mechanical properties of Ti film were characterized by surface profiler, scanning probe microscope, X-ray diffraction and nano indenter.The results show that the coupling DC current increases, the target average power increases, The current density decreases and the plasma electron density increases. When the coupling DC current is 2.0A, the plasma electron density and electron temperature get larger values of 2.98 V and 0.93 eV, respectively. When the coupling DC current increases, the deposition rate of Ti film increases approximately linearly , The roughness increases and the hardness and elastic modulus decrease slightly. When the same target average power is used, the deposition rate of Ti thin films prepared by compound high-power pulsed magnetron sputtering is much higher than that of conventional DC magnetron sputtering. The target The average power of 650W composite high-power pulsed magnetron sputtering of Ti film than the traditional DC magnetron sputtering Ti film smoother, the average roughness Low 1.32 nm, more excellent mechanical properties, hardness increased by 2.68GPa.