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对不同结构的有机发光器件(OLED)进行了电容-电压(C-V)特性测量,研究了不同空穴注入结构对OLED负电容的影响。结果表明,负电容的产生与OLED内部电场的分布有着密切的关系,负电容开始出现的频率与电压的平方根呈指数关系。与超薄的单层空穴注入层相比,掺杂的空穴注入层不仅能降低器件的驱动电压,而且其载流子传输特性和出现负电容时的初始电压对频率有着更强的依赖性。
The capacitance-voltage (C-V) characteristics of organic light-emitting devices (OLEDs) with different structures were measured. The effects of different hole injection structures on the OLED negative capacitance were investigated. The results show that the negative capacitance is closely related to the distribution of the electric field inside the OLED. The frequency at which the negative capacitance begins to appear is exponential with the square root of the voltage. The doped hole injection layer can not only lower the driving voltage of the device, but also has a stronger dependence on the carrier frequency on the carrier transport characteristics and initial voltage at the occurrence of negative capacitance, as compared to the ultra-thin single-layer hole injection layer Sex.