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中子掺杂直拉单晶硅的正电子淹没特征左开芬张纯孟祥提苏庆善陆余发（清华大学核能技术设计研究院１０００８４）关键词：中子辐照直拉单晶硅正电子淹没点缺陷（一）前言因为正电子对物质中电子状态具有极端敏感性，正电子淹没技术（ＰＡＴ）已成为研究材料中微观缺陷的有...
Positron annihilation of neutron-doped Czochralski silicon Zuo Kaifen Zhang Chun Meng Xiangti Su Qingshan Lu Yufa (Nuclear Energy Technology Design and Research Institute, Tsinghua University) Key words: A) Introduction Because positron is extremely sensitive to the electronic state of matter, positron-submerged technology (PAT) has become the study of microscopic defects in materials.