研究了一种在硅片上进行无抗蚀膜光化学蚀刻的新方法 ,使用过氧化氢 (H2 O2 )和氟酸 (HF)作为光化学媒质 ,使用ArF紫外激光作为光源 ,无需事先加工抗蚀膜 ,可直接在硅表面进行蚀刻。在H2 O2 与HF的浓度比为 1.3时 ,蚀刻效果最佳 ,当激光能量密度为 2 9mJ/cm2 ,照射脉冲数为 10 0 0 0次时 ,得到 2 10nm的蚀刻深度 A new method of photochemically etching resist-free films on silicon wafers was studied. Hydrogen peroxide (H2 O2) and hydrofluoric acid (HF) were used as the photochemical medium. ArF UV lasers were used as the light source. , Can be directly on the silicon surface etching. The etching effect is best when the concentration ratio of H2 O2 to HF is 1.3. When the laser energy density is 29 mJ / cm2 and the number of irradiation pulses is 10 000, an etching depth of 210 nm is obtained