在无任何催化剂的条件下,采用快速升温法在单晶硅衬底上制备了高质量的、形貌均匀的CdS纳米带．X射线衍射(XRD)、透射电镜(TEM)和场发射扫描电镜(FESEM)分析显示,纳米带属六方单晶结构,生长方向为[001]．讨论了纳米带形成的机理,认为CdS纳米带状六方结构的形成,主要是由于生长速度的各向异性及在沉积区具有较低的过饱和度和较高的沉积温度等因素导致． In the absence of any catalyst, CdS nanoribbons with high quality and uniform morphology were prepared on single crystal silicon substrates by rapid heating. X-ray diffraction (XRD), transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM) analysis showed that the nanobelts have a hexagonal single crystal structure with a growth direction of [001]. The formation mechanism of nanobelts was discussed. The formation of CdS nanostrip hexagonal structures was mainly attributed to the anisotropy of growth rate, the lower supersaturation and the higher deposition temperature in the deposition area.