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应用分子动力学仿真研究了原子量级条件下磨粒钝圆半径、磨削深度和磨削速度对单晶硅磨削后亚表面损伤层深度的影响.分子动力学仿真结果表明:在磨削深度和磨削速度相同情况下,随着磨粒钝圆半径的减小,损伤层深度和硅原子间势能亦减小.随着磨削深度的增大,损伤层深度和硅原子间势能增大.在磨削深度和磨粒钝圆半径相同的情况下,在20 ～200 m/s范围内,磨削速度对单晶硅亚表面损伤影响很小,说明分子动力学仿真对磨削速度的变化不敏感,因此可以适当提高仿真速度,从而缩短仿真时间和扩大仿真规模.单晶硅亚表面损伤主要是基于硅原子间势能的变化,并通过超精密磨削实验进行了实验验证.
Molecular dynamics simulation was used to study the influence of the obtuse circular radius, grinding depth and grinding speed on the subsurface damage depth after monocrystalline silicon grinding.Molecular dynamics simulation results show that the grinding depth With the same grinding speed, the damage depth and the potential energy between silicon atoms decrease with the reduction of the obtuse radius of abrasive grains. As the depth of grinding increases, the damage depth and the potential energy between silicon atoms increase At the same grinding radius and radius, the influence of grinding speed on the subsurface damage of monocrystalline silicon is very small in the range of 20 ~ 200 m / s, which shows that the influence of molecular dynamics simulation on the grinding speed So the simulation speed can be increased properly, which can shorten the simulation time and expand the simulation scale.Single-crystalline silicon subsurface damage is mainly based on the change of potential energy between silicon atoms, and the experimental verification by ultra-precision grinding experiments.