论文部分内容阅读
本文报导了一种具有低倍增暗电流的单模光纤金属化耦合p~+nGe-APD。该器件的过剩噪声因子一般为F=6.5,结电容小于0.5pF,室温下的倍增暗电流仅为5nA。
In this paper, we report a single mode fiber metallization coupled p ~ + nGe-APD with a low d.c. current. The device’s excess noise figure is typically F = 6.5, junction capacitance is less than 0.5pF, dark current doubled at room temperature is only 5nA.