论文部分内容阅读
采用简单的气固反应,在Si衬底上成功制备了SiC一维纳米材料。用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线电子能谱(EDX)、X射线衍射谱(XRD)和光致发光谱(PL)等手段研究了材料的表面形貌、结构组成和光学性质。研究结果表明,制备的纳米材料为SiC/SiO2核壳结构纳米线,在室温时发射中心波长分别为380nm和505nm的紫外峰和绿光带。经分析认为,波长380nm的紫外峰来源于SiO2中的O空位缺陷;而中心波长505nm的绿光带则来源于受量子尺寸效应影响并包覆了SiO2外壳的SiC内核。
A simple one-dimensional solid-state reaction was used to fabricate SiC one-dimensional nanomaterials on Si substrate. The surface morphology, structure and composition of the materials were studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (EDX), X-ray diffraction (XRD) and photoluminescence (PL) And optical properties. The results show that the prepared nanomaterials are SiC / SiO2 core-shell nanowires and emit UV peaks and green bands with central wavelengths of 380 nm and 505 nm at room temperature respectively. According to the analysis, the UV peak at 380 nm is originated from the O vacancy defects in SiO2. The green band centered at 505 nm is derived from the SiC core affected by the quantum size effect and coated with SiO2 shell.