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微芯片铝键合系统的失效是器件可靠性研究的重要课题，铝键合点上的氟沾污加速了对铝合金化表面的腐蚀，导致微芯片的失效。国外的工作多数讨论氟沾污引起失效的机理；很少给出沾污物的系列化学成份。ＴＯＦＳＩＭＳ提供了一个探测和分析微芯片键合点上沾污成份的有力武器，作者比较了两个ＴＯＦＳＩＭＳ的负离子谱，一个是经目检发现键合点上有沾污斑点的芯片，另一个是键合点无沾污的芯片。根据对ＴＯＦＳＩＭＳ特征谱线和离子像的研究，认为沾污点的化学成份主要是铝氟化合物和铝氧氟化合物。进一步的工作发现除微芯片的制造工艺过程外，成品圆片的存放处理也是形成键合点上氟沾污的原因。
The failure of the microchip aluminum bonding system is an important issue in the research of device reliability. The fluorine contamination on the aluminum bonding point accelerates the corrosion on the aluminum alloy surface and leads to the failure of the microchip. The majority of foreign work discusses the mechanism by which fluorine contamination causes failure; seldom gives a list of chemical compounds that stain contaminants. TOF-SIMS provides a powerful tool for detecting and analyzing contamination on microchips at the bond sites. The authors compared the negative ion spectra of two TOF-SIMS, one was found by visual inspection to have spots on the bond pads, and the other One is a bondless chip. According to TOF SIMS characteristics of the spectrum and ion imaging studies that the chemical composition of stains are mainly aluminum fluoride and aluminum oxide compounds. Further work found that in addition to the microchip manufacturing process, the storage of finished wafers is also the cause of fluorine contamination at the bond sites.