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本文以CdS和ZnS粉末作为前驱物,采用化学气相沉积(CVD)法在1100条件下,以金膜为催化剂在硅衬底上一步合成了Zn1-XCdXS三元纳米线.扫描电镜(SEM)测试表明合成的Zn1-XCdXS晶体具有线状的微观形貌;X射线衍射(XRD)图谱显示产物是六方铅锌矿Zn0.2Cd0.8S;X射线能量色散谱(EDX)给出了Zn和Cd和S的比例为0.1:0.7:1.产物Zn1-XCdXS纳米线的生长机理为气-液-固(VLS)机制,物相形成机制为替位式化合机制,即Zn离子取代CdS中Cd离子化合成三元物相.
In this paper, CdS and ZnS powders were used as precursors, and Zn1-XCdXS ternary nanowires were synthesized on silicon substrate by chemical vapor deposition (CVD) method under 1100 conditions using gold film as catalyst. SEM The results show that the synthesized Zn1-XCdXS crystal has a linear micromorphology. X-ray diffraction (XRD) pattern shows that the product is hexagonal lead zinc Zn0.2Cd0.8S; X-ray energy dispersive spectroscopy (EDX) S ratio is 0.1: 0.7: 1. The growth mechanism of the product Zn1-XCdXS nanowire is gas-liquid-solid (VLS) mechanism, and the mechanism of the phase formation is the substitutional mechanism, that is, Zn ion replaces Cd ionization in CdS Synthesis of ternary phase.