论文部分内容阅读
QT1型晶体管伏安特性图示仪,是一种能在示波管萤光屏上直接观察PNP、NPN型晶体管各种特性曲线簇的全晶体管化的专用仪器,还可以通过萤光屏前的标尺刻度直接读测晶体管的各项参数。1.可测下列各击穿电压及饱和电流:BV_(EBO)、BV_(CBO)、BV_(CEO)、BV_(CES)、BV_(CER)I_(EBO)、I_(CBO)、I_(CEO)、I_(CES)、I_(CER)2.可测下列共发射或共基极特性曲线簇:(1)输出特性:I_c-V_(ce)或I_c-V_(cb)(2)输入特性:I_b-V_(be)或I_e-V_(eb)(3)电流放大特性:I_c-I_b或I_c-I_e
QT1-type transistor voltammetry characteristics of the instrument is a direct view in the oscilloscope fluorescent screen PNP, NPN-type transistors of the various characteristics of the full transistor-specific instrument cluster, but also through the front of the screen Scale scale directly read the transistor parameters. 1. The following breakdown voltages and saturation currents can be measured: BV_ (EBO), BV_ (CBO), BV_ (CEO), BV_ (CES), BV_ (CER) I_ (EBO), I_ (CBO), I_ ), I_ (CES), and I_ (CER) 2. The following co-emitter or common-base characteristic curves can be measured: (1) Output characteristics: I_c-V_ce or I_c-V_cb Input characteristics : I_b-V be (be) or I_e-V eb (3) current amplification characteristics: I_c-I_b or I_c-I_e