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用MgB2 靶 ,控制直流磁控溅射工作在异常辉光放电或弧光放电状态 ,在SrTiO3 衬底上原位一次性得到了MgB2 超导薄膜 ,其起始转变温度为 32K ,零电阻温度为 15K .
With MgB2 target, DC magnetron sputtering was controlled to work in abnormal glow discharge or arc discharge state. MgB2 superconducting thin film was obtained in situ once on SrTiO3 substrate with initial transition temperature of 32K and zero resistance temperature of 15K .