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本文介绍了塑性衬底上柔性微波单晶硅纳米薄膜PIN二极管的制备方法及其在不同工作状态下的射频特性,在二极管正向导通的条件下,从直流到20GHz范围内,二极管在弯曲状态下的射频特性有显著的提高。为了研究相关机理,我们建立了多种状况下的二极管射频等效电路模型。模型表明,随着弯曲应力的变化,二极管内部电阻和寄生电感为影响其射频特性的主要因素,这对于合理设计及利用单晶硅薄膜二极管制作柔性单片微波集成系统有很大的指导意义。
In this paper, the preparation method of flexible microwave monocrystalline silicon nano-thin film PIN diode on plastic substrate and its RF characteristics under different working conditions are introduced. Under the condition of forward conducting diode, from DC to 20GHz, Under the RF characteristics have significantly improved. In order to study the related mechanism, we have established a diode RF equivalent circuit model under various conditions. The model shows that with the change of bending stress, the internal resistance and the parasitic inductance of the diode are the main factors that affect the RF characteristics. This is of great guiding significance for the rational design and fabrication of a flexible monolithic microwave integrated system using monocrystalline silicon thin film diodes.