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一种PNPN型异质结负阻激光器业已研制成功,它的具体结构是n·GaAs/N·Ga_(1-x)Al_xAs/p·GaAs/p·Ga_(1-y)Al_yAs/P·GaAs/n·GaAs/P·Ga_(1-z)Al_zAs;其中,x=0.2～0.3,y≤0.20,z=0.1。本文研究了这种激光器的工作原理和制备工艺,分析了存在异质结构时器件的电导通机理,测量了器件的某些电参数及激射特性。器件的转折电压V_s为15～20V,维持电压V_H约为1.5V,维持电流I_H约为10～100mA。激射阈电流密度最低可达2500A/cm~2。将激光器置于简单的张弛振荡线路中能够较容易地实现自振激射。
A PNPN heterostructure negative resistance laser has been successfully developed and its specific structure is n · GaAs / N · Ga_ (1-x) Al_xAs / p · GaAs / p · Ga_ (1-y) Al_yAs / P · GaAs / n · GaAs / P · Ga_ (1-z) Al_zAs, where x = 0.2 to 0.3, y ≦ 0.20 and z = 0.1. In this paper, the working principle and the preparation process of this laser are studied. The mechanism of electrical conduction in the presence of heterogeneous structures is analyzed. Some electrical parameters and lasing characteristics of the device are measured. Device turning voltage V_s is 15 ~ 20V, the holding voltage V_H is about 1.5V, the holding current I_H is about 10 ~ 100mA. Laser threshold current density of up to 2500A / cm ~ 2. Placing the laser in a simple relaxation oscillator allows for easier self-lasing.