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在213-450 K温度范围内使用Ge离子辐照国防科技大学65 nm SMIC65LL三阱工艺SRAM,研究了温度对其多位翻转的影响。表1列出了器件写全1时测得的纵向翻转次数,表2列出了器件写全0时测得的纵向翻转次数。从表1、2中可看出,随着温度的升高,器件纵向发生多位翻转的次数增加,且出现了十几位同时翻转,这是由于阱电势坍塌导致的,且随着温度的升高,阱电势坍塌现象加剧。
In the temperature range of 213-450 K, Ge ions were used to irradiate the 65-nm SMIC65LL triple-well SRAM at National University of Defense Technology. The effects of temperature on the multi-bit flip were studied. Table 1 lists the number of vertical flip-flops measured while the device is writing all 1s. Table 2 shows the number of vertical flip-flops measured when the device is writing all zeroes. As can be seen from Tables 1 and 2, as the temperature rises, the number of multi-bit flipping occurs in the longitudinal direction of the device and more than a dozen simultaneous flipping occurs due to the collapse of the well potential, and as the temperature Rise, the trap potential collapse phenomenon intensified.