论文部分内容阅读
,Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide
【机 构】
:
Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631,
【出 处】
:
中国物理B(英文版)
【发表日期】
:
2010年6期
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