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介绍了一种全新的FM调制器结构.该调制器基于小数分频锁相环技术,并在电荷泵单元中引入额外偏差电流消除电荷泵失配对带内噪声的影响.该芯片采用CSMC0·5μmDPTM CMOS工艺,测试结果表明,其SNR≥82dB,THD≤0·08,最大带外辐射能量低于-90dBc/Hz.此外,该芯片还采用自动频率调整的方法避免调节片外电感.该芯片的这些特点十分适合调频发射的要求.
This paper introduces a new FM modulator architecture based on fractional-N PLL technology with an additional bias current introduced in the charge pump unit to eliminate the effect of charge pump mismatch on in-band noise.The chip uses CSMC0 · 5μmDPTM CMOS technology, the test results show that the SNR ≥ 82dB, THD ≤ 0.08, the maximum out of band radiation energy below-90dBc / Hz. In addition, the chip also uses automatic frequency adjustment method to avoid adjusting the chip inductor. These features are very suitable for FM launch requirements.