论文部分内容阅读
本文对γ辐照环境下,小尺寸MOSFET的性能进行了研究,发现了短沟MOSFET阈值电压辐照增强漂移效应;提出了辐照损伤电荷非均匀分布概念;开发了二维数值模拟程序,对辐照损伤电荷引起的器件物理作用进行了分析;建立了辐照环境下短沟道MOSFET的简化模型,成功地解释了实验现象;在理论分析的基础上,提出了适用于VLSI的抗核加固措施,并经实验证实其有效性。
In this paper, the performance of small-size MOSFET under γ-irradiation was studied, and the effect of enhanced threshold voltage radiation drift of short-channel MOSFET was found. The concept of nonuniform distribution of irradiation damage charge was proposed. A two-dimensional numerical simulation program was developed. The physical effects of device induced by irradiation damage were analyzed. A simplified model of short-channel MOSFET under irradiation environment was established and the experimental phenomena were successfully explained. On the basis of theoretical analysis, a nuclear-resistant reinforcement suitable for VLSI Measures, and confirmed by the experiment of its effectiveness.