Atomic structure data and effective collision strengths for 1s2 2s2 2p6 3s2 3p6 3d10 and 54 fine-structure levels are contained in the configurations 1s2 2s2 2p
The influence of 60Co (γ-ray) irradiation on the electrical characteristics of Al/Si3N4/p-Si (MIS) structures is investigated using capacitance-voltage (C-V) a
Highly efficient phosphorescent white organic light-emitting diodes (WOLEDs) with stable emission spectra are successfully fabricated by using an RGB three-colo
An nc-Si floating gate MOS structure is fabricated by thermal annealing of SiNx/a-Si/SiO2.There are nc-Si dots isolated by a-Si due to partial crystallization.C
Electrorheological (ER) fluids are smart fluids which can change from liquid-like to solid-like in the time of the order of 10-3 s under an applied electrical f