【摘 要】
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Photoluminescence (PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction sola
【机 构】
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Key Laboratory of Beam Technology and Materials Modification(Ministry of Education),College of Nucle
论文部分内容阅读
Photoluminescence (PL) measurements are carried out to investigate the degradation of GaInP top cell and GaAs middle cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.0,1.8 and 11.5 MeV electrons with fluences ranging up to 3 × 1015,1 × 1015 and 3 × 1014 cm-2,respectively.The degradation rates of PL intensity increase with the electron fluence and energy.Furthermore,the damage coefficient of minority carrier diffusion length is estimated by the PL radiative efficiency.The damage coefficient increases with the electron energy.The relation of damage coefficient to electron energy is discussed with the non-ionizing energy loss (NIEL),which shows a quadratic dependence between damage coefficient and NIEL.
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