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研制了 Al0 .2 4 Ga0 .76 As/ In0 .2 2 Ga0 .78As单平面掺杂 PHEMT器件 (SH - PHEMT)和双平面掺杂 PHEMT器件(DH- PHEMT) ,并对其特性进行了比较 .由于采用了双异质结、双平面掺杂的设计 ,DH- PHEMT能将载流子更好地限制在沟道中 ,得到更大的二维电子气浓度和更均匀的二维电子气分布 ,这些都有利于提高器件的性能 .因此 ,DH- PHEMT器件具有更好的线性度 ,在较大的栅压范围内具有高的跨导和更大的电流驱动能力 .这说明 DH-PHEMT器件更加适用于高线性度应用的微波功率器件 .
A single-plane doped PHEMT device (SH-PHEMT) and a double-plane doped PHEMT device (DH-PHEMT) were fabricated and their characteristics were compared. Due to the double heterojunction, double-plane doping design, DH-PHEMT can better confine carriers in the channel to obtain larger two-dimensional electron gas concentration and more uniform two-dimensional electron gas distribution, These are conducive to improve the performance of the device.Therefore, DH-PHEMT device has a better linearity in the larger gate voltage range with high transconductance and greater current drive capability.This shows that the DH-PHEMT device more Microwave power devices for high linearity applications.