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获得高质量的ｎ型ＧａＮ单晶膜是制作ＧａＮ基光电子器件的关键之一。采用立式ＭＯＣＶＤ系统生长ＧａＮ：Ｓｉ单晶膜，通过优化生长工艺，获得了电子载流于浓度高达２ ×１０１９ｃｍ－３，迁移率达１２０ｃｍ２／Ｖ·ｓ的ｎ型ＧａＮ：Ｓｉ单晶膜；并有效地抑制了ＧａＮ中由深能级引起的黄带发射，大大提高带边发光强度。研究结果还表明：随着Ｓ掺杂量的增大，ＧａＮ：Ｓｉ单晶膜的电子载流于浓度增加，迁移率下降，Ｘ光双晶衍射峰半高宽增大。首次报道了随掺Ｓ量增大，ＧａＮ：Ｓｉ单晶膜的生长速率显著下降的现象。
Obtaining high quality n-type GaN single-crystal films is one of the keys to fabricating GaN-based optoelectronic devices. The growth of GaN: Si single crystal film by vertical MOCVD system was studied. The n - type GaN: Si single crystal film with electron mobility of up to 2 × 10 19 cm -3 and mobility of 120 cm 2 / V · s was obtained by optimizing the growth process. And effectively suppresses the yellow band emission caused by the deep level in GaN, thereby greatly improving the luminous intensity of the band edge. The results also show that the electron carrier density of GaN: Si single crystal film increases with the increase of S doping amount, the mobility decreases and the FWHM of X-ray double crystal diffraction peak increases. For the first time, it was reported that the growth rate of GaN: Si monocrystalline film decreased significantly with the increase of S content.