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利用动态内耗方法测定了两种不同纯度Ta箔经电解充氢处理后在100—400K温度范围内的内耗值(Q~(-1)),并根据Gorsky原理计算了氢在Ta中的扩散系数。实验结果表明,在T>250K和T<180K的温度区间内氢的扩散系数D服从Arrhenius关系,同时计算了扩散常数D_0和激活能U。最后讨论了氢浓度和其它杂质对氢的扩散系数的影响。
The internal friction loss (Q ~ (-1)) of two different purity Ta foils in the temperature range of 100-400K was measured by dynamic internal friction method. The diffusion coefficient of hydrogen in Ta was calculated according to the Gorsky principle . The experimental results show that the diffusion coefficient D of hydrogen follows the Arrhenius relation in the temperature range of T> 250K and T <180K, and the diffusion constant D_0 and the activation energy U are calculated. Finally, the effects of hydrogen concentration and other impurities on the hydrogen diffusion coefficient are discussed.