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本文介绍外延生长Cd_xHg_(1-x)Te的新方法。CdTe和HgTe都属于Ⅱ-Ⅳ族化合物,它们的品格只相差0.3％。因此,采用CdTe单晶片作衬底。
This article describes a new method for the epitaxial growth of Cd_xHg_ (1-x) Te. CdTe and HgTe belong to the group II-IV compounds, their difference only 0.3%. Therefore, a CdTe single crystal substrate is used as a substrate.