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基于相变单元电压操作的局限性,提出一种电流编程操作的方法。针对纳秒级快速相变的需求,设计了一款高速可编程的脉冲电流源,采用0.35μm标准CMOS工艺。结果显示:在10MHz编程速度的条件下,驱动脉冲电流能够良好地跟随控制信号的脉冲波形;当编程信号频率从500kHz到10 MHz变化时,输出电流变化为4.5%;当编程电阻从200Ω到10kΩ变化时,输出电流精度误差不到3%,芯片面积为0.84mm2。在高速可编程脉冲电流源的测试平台上,对相变单元进行电流编程操作,结果显示,相变电阻能够可靠地进行晶态-非晶态的高速可逆相变。
Based on the limitations of the operation of the phase transition cell voltage, a method of current programming operation is proposed. For fast nanosecond phase transition needs, a high-speed programmable pulse current source is designed, using 0.35μm standard CMOS technology. The results show that under the conditions of 10MHz programming speed, the driving pulse current can follow the pulse waveform of the control signal well. When the programming signal frequency changes from 500kHz to 10MHz, the output current changes 4.5%. When the programming resistance is from 200Ω to 10kΩ Changes, the output current accuracy of less than 3% error, the chip area of 0.84mm2. In the high-speed programmable pulse current source test platform, the phase-change current programming unit, the results show that the phase-change resistance can be reliably crystalline-amorphous high-speed reversible phase transition.