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1981年GaAs及其有关化合物国际讨论会于9月20～23日在东京召开.讨论会的主要发起者是日本电子学与通讯工程师学会(IECE).参加这次会议的代表共200多人.我国派去代表5人,其中四机部3人,上海冶金所2人.预先经过大会秘书处挑选,安排在会上宣读的报告是100篇(包括南京固体器件研究所和上海冶金所各一篇),开会时又收到Late News近10篇.把全部报告分为以下11个单元:GaAs集成电路、深能级、微波器件、表面和MIS界面性质、光电器件、输运性质、液相外延、体单晶、材料特性、MOCVD、MBE和VPE以
The 1981 International Symposium on GaAs and Its Related Compounds was held in Tokyo from September 20 to September 23. The main sponsor of the symposium was the Japan Society of Electronics and Telecommunications Engineers (IECE), with over 200 delegates attending the conference. China sent representatives on behalf of five people, including three of the four machine, the Shanghai Metallurgical Institute 2. Pre-selected by the General Assembly Secretariat, scheduled to read at the meeting reported 100 (including the Nanjing Institute of Solid Devices and the Shanghai Institute of Metallurgical And received over 10 Late News reports during the meeting. The report is divided into the following 11 units: GaAs integrated circuits, deep level, microwave devices, surface and MIS interface properties, optoelectronic devices, transport properties, liquid phase Epitaxy, bulk single crystal, material properties, MOCVD, MBE and VPE