论文部分内容阅读
金刚石薄膜在光谱蓝区的电致发光已有过一些研究工作。然而迄今为止,金刚石薄膜在紫外光谱区的电致发光现象尚未见有报道。我们采用了非晶金刚石薄膜——本征金刚石薄膜——掺杂金刚石薄膜3层结构,制备了电致发光器件。观察到在近紫外光谱区380nm处有一发光主峰。 为了提高金刚石薄膜的成核密度,改善薄膜的均匀性,我们采用脉冲激光沉积技术首先在硅衬底上沉积一层非晶金刚石薄膜。非晶金刚石薄膜脉冲激光沉积的实验装置已在文献[4]中有过详细描述。采用波长355nm,重复频率5Hz的Q开关3次谐波YAG激光器,激光功率密度为3.5×10~8W/cm~2。沉积时间5min,获得的非晶金刚石薄膜厚度为0.15μm,电阻率为1.33×10~6Ω·cm。为了提高电致发光器件的击穿电压,再利用微波CVD系统在非晶金
There has been some research work on the electroluminescence of diamond films in the blue region of the spectrum. However, until now, the electroluminescence phenomenon of diamond film in the ultraviolet region has not been reported yet. We have adopted a three-layer structure of amorphous diamond film - intrinsic diamond film - doped diamond film, prepared electroluminescent device. A luminescence peak at 380 nm in the near ultraviolet region was observed. In order to improve the nucleation density of the diamond film and improve the uniformity of the film, we use the pulse laser deposition technique to deposit an amorphous diamond film on the silicon substrate first. An experimental setup for pulsed laser deposition of amorphous diamond thin films has been described in detail in [4]. Using a Q-switched third harmonic YAG laser with a wavelength of 355 nm and a repetition frequency of 5 Hz, the laser power density is 3.5 × 10 -8 W / cm 2. The deposition time was 5min, the thickness of amorphous diamond film was 0.15μm and the resistivity was 1.33 × 10 ~ 6Ω · cm. In order to improve the breakdown voltage of the electroluminescent device, the microwave CVD system is reused in amorphous gold