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厚膜多层布线工艺,又称为二次集成技术.其特点是在氧化铝陶瓷基片上装配厚膜多层电路装置.其方法是将电路的导体图形和绝缘玻璃层连续通过丝网漏印、烧结在基片上.二层或更多层导线通过玻璃绝缘层,一层层地进行隔离.同时,在绝缘介质层中的窗口和通道上把TTL、ECL、MOS等硅集成半导体电路,采用键压工艺,组装在厚膜多层布线的窗口中以实现二次集成完成电路的整个功能.
Thick film multi-layer wiring technology, also known as secondary integration technology.It is characterized by alumina ceramic substrate assembly thick film multi-layer circuit device.The method is the circuit conductor pattern and insulating glass layer through the screen leakage , Sintered on the substrate. Two or more layers of conductor through the glass insulation, layer by layer isolation at the same time, in the insulating medium layer on the window and channel TTL, ECL, MOS and other silicon integrated semiconductor circuits, using Key pressure process, assembled in the thick film multi-layer wiring window in order to achieve the second integrated circuit to complete the entire function.