半导体量子阱超晶格结构的载流子除了具有平行于阱层界面的纵向运动(纵向输运)外,还具有垂直于界面方向的横向运动(横向输运)。横向运动需要穿过势垒阻挡层,因此又称为载流子的隧道穿透效应(Tunneling,简称隧穿)。自从1973年Esaki和Tsu等人的开创性工作以来,特别是量子阱超晶格材料的问世, The carriers of the semiconductor quantum well superlattice structure have lateral movement (lateral transport) perpendicular to the interface direction in addition to the longitudinal movement (longitudinal transport) parallel to the interface of the well layer. Lateral movement needs to cross the barrier barrier, and tunneling, also known as tunneling, is called tunneling. Since the groundbreaking work of Esaki and Tsu in 1973, and especially the advent of quantum well superlattice materials,