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研究了不同In组分的InxGa1-xAs(0≤x≤ 0 3)覆盖层对自组织InAs量子点的结构及发光特性的影响 .透射电子显微镜和原子力显微镜表明 ,InAs量子点在InGaAs做盖层时所受应力较GaAs盖层时有所减小 ,并且x =0 3时 ,InGaAs在InAs量子点上继续成岛 .随x值的增大 ,量子点的光荧光峰红移 ,但随温度的变化发光峰峰位变化不明显 .理论分析表明InAs量子点所受应力及其均匀性的变化分别是导致上述现象的主要原因 .
The effects of InxGa1-xAs (0≤x≤0 3) with different In compositions on the structure and luminescence properties of self-organized InAs quantum dots have been investigated by transmission electron microscopy and atomic force microscopy. InAs quantum dots When the stress is lower than that of GaAs cap layer, and In x = 0 3, InGaAs islands continue to be formed in the InAs quantum dots.When the value of x increases, the fluorescence peak of the QDs shifts red, but with the temperature The change of luminescence peak position is not obvious.Theoretical analysis shows that the variation of stress and uniformity of InAs quantum dots are the main reasons leading to the above phenomenon.