PtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition (PLD). The surface structure of thesefilms was studied by atomic force microscopy (AFM). In addition, the compositional structure of the PtSi as deter-mined from X-ray photoelectron spectroscopy (XPS) is discussed. First report of a possible growth mechanism ispresented, on studying the variation of morphological features (i.e., roughness and size of crystallites) with annealingtemperatures and the film thicknesses.