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对于Nb_2O_5施主掺杂的TiO_2半导瓷,掺入BaCO_3,Bi_2O_3可形成晶界绝缘层并可降低烧结温度.采用Mn(NO_3)_2溶液热扩散的方法使Mn~(2+)进入晶界可提高晶界势垒,从而提高压敏电压及非线性系数,大幅度降低介电损耗.
For Nb_2O_5 - doped TiO_2 semiconducting ceramics, the addition of BaCO_3 and Bi_2O_3 can form the grain boundary insulating layer and decrease the sintering temperature. Mn_2 can be introduced into the grain boundary by thermal diffusion of Mn_ (NO_3) _2 solution Improve the grain boundary barrier, so as to improve the voltage-dependent voltage and nonlinear coefficient, greatly reduce the dielectric loss.