Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO_2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75eV to 0.90eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900 ° C. was studied with a large doping concentration and growth temperature. The broad photoluminescence band (from 0.75  eV to 0.90  eV) including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.