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本文揭示了ZnO压敏电阻器与银电极接触的表面性质(接触势垒)与体内性质(界面势垒)不一致;前者的非线性系数比后者要差。 在高压ZnO压敏电阻器中,适当地增加单个压敏电阻片的厚度,减少串联电极接触势垒数,可有效地改善残压特性。适当地增加电阻片的电极厚度,无论对于改善大电流的分布和电极接触势垒的散热条件都是必要的。ZnO压敏电阻片(下称电阻片)的非线性特性,产生于晶界层的两侧与ZnO晶粒交界面势垒上,这就是所谓分离的双肖特基势垒模型。这个模型描绘了由热激活(肖特基)电流和隧道(击穿)电流分阶段作用的综合导电过程。
This paper reveals that the surface properties (contact barrier) of the ZnO varistor in contact with the silver electrode are inconsistent with those in the body (interface barrier); the former has a worse nonlinearity than the latter. In the high-voltage ZnO varistor, the appropriate increase in the thickness of a single varistor, reducing the number of contacts in series with the electrode barrier, can effectively improve the residual voltage characteristics. Appropriately increasing the electrode thickness of the resistive sheet is necessary both for improving the distribution of the large current and for the heat dissipation conditions of the electrode contact barrier. The non-linearity of the ZnO varistor sheet (hereinafter referred to as “resistive sheet”) arises from the interface barrier between the two sides of the grain boundary layer and the ZnO grains. This is the so-called double Schottky barrier model. This model depicts an integrated conductive process that is staged by a thermally activated (Schottky) current and a tunneling (breakdown) current.