论文部分内容阅读
随着信息处理社会的发展,对研制更长距离、大容量的1μm波段光通信系统的要求更加强烈了,要实现这个目标就需要灵敏度更高的光接收器件。现在正在研制二种器件,一种是把以前的锗雪崩光电二极管进行改进的(Ge-APD);另一种是新结构APD,包括使用InP系或GaSb系材料的超晶格APD、缓变带隙APD、或使用共振电离现象的APD。这些器件都有可实现以前的APD不能得到的低噪声特性,我们认为它们是新一代的光接收器件。但是,现在仅仅处于研究的开始,要用于光通信系统还需要相当长时间。目前要提高光接收器件的灵敏度就要对前面叙述的Ge-APD进行改进,或研制使用新材料InGaAs的APD,这二种器件的工作原理与以前的APD相同。本文仅就这二种器件的最新成果作一评述。
With the development of information processing society, there is a strong demand for the development of a longer-distance, high-capacity 1-m wavelength optical communication system. To achieve this goal, a more sensitive optical receiving device is required. Two kinds of devices are being developed, one is the Ge-APD (Germanium Avalanche Photodiode), and the other is the new structure APD, including the use of InP or GaSb materials superlattice APD, slow Band gap APD, or APD using resonance ionization phenomenon. These devices have all the low-noise features that previous APDs did not get, and we think they are the next generation of light-receiving devices. However, now it is only at the beginning of the research that it will take quite a long time before optical communication systems are used. At present, to improve the sensitivity of the light-receiving device, the Ge-APD mentioned above should be improved or the APD using the new InGaAs material should be developed. The working principle of these two devices is the same as the previous APD. This article reviews only the latest achievements of these two devices.