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采用新的磁控溅射两步法沉积自旋阀多层膜,不仅交换耦合作用大大增强,而且可以提高磁电阻比值和降低层间耦合作用.得到磁电阻比值～26%,交换耦合场～28kA/m,层间耦合场～01kA/m.自旋阀的下部(缓冲层(Ta)/自由层(NiFe)/中间隔离层(Cu))在低氩气压下沉积、上部(被钉扎层(NiFe)/反铁磁钉扎层(FeMn)/覆盖层(Ta))则在高氩气压下沉积.前者保证了自旋阀具有强(111)晶体织构,平整的NiFe/Cu界面和致密的Cu层,抑制了层间耦合作用;后者则促进小尺寸磁畴生长和增加NiFe/FeMn间有效界面反铁磁交换耦合,大大提高了交换耦合钉扎作用
The new magnetron sputtering two-step deposition of multi-layer spin-valve film not only greatly enhance the exchange coupling, but also can improve the ratio of magnetic resistance and reduce the coupling between layers to obtain the ratio of magnetoresistance ~ 26%, the exchange coupling field ~ 28kA / m, interlaminar coupling field ~ 01kA / m Lower part of spin valve (Ta / NiFe / Cu) is deposited under low argon pressure and the upper part (pinned (NiFe) / antiferromagnetic pinning layer (FeMn) / capping layer (Ta)) is deposited under high argon pressure.The former ensures that the spin valve has a strong (111) crystal texture, a flat NiFe / Cu interface And dense Cu layer to suppress the interlayer coupling; the latter to promote the growth of small-size magnetic domains and increase the effective interface anti-ferromagnetic exchange coupling between NiFe / FeMn greatly enhance the exchange coupling pinning