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GaAs MESFET器件的低频噪声是该器件一项重要的电特性,研究它的产生机理对器件微波非线性和从直流到微波超宽带等方面的应用,以及了解器件内部深能级均非常重要。 GaAs MESFET低频噪声研究在国内尚未见到有关文献报道。在建立了GaAs MESFET低频噪声测量系统的基础上,作者对南京电子器件研究所研制生产的各种GaAs MESFET样管及HEMT器件进行了测量。这些器件的低频噪声具有以下特点:(1)器件低频噪声同器件的偏置状态和几何参数有关,其等效输入噪声电压随源—漏电流和栅偏电压绝对值的增加而增大,但随栅长和栅宽的增加而减小。并发现功率器件噪声较低。(2)GaAs MESFET低频噪声比Si器件大。(3)一般器件的低频噪声谱呈1/f~μ关系,其中α=11;而GaAs MESFET的α在0.5～2之间。(4)HEMT器件的低频噪声同GaAs器件相比稍大。
The low frequency noise of GaAs MESFET device is an important electrical characteristic of the device. It is very important to study the mechanism of its generation for microwave non-linearity and DC-to-microwave ultra-wideband applications, as well as to understand the deep level in the device. GaAs MESFET low frequency noise research in the country have not seen the literature. Based on the establishment of GaAs MESFET low frequency noise measurement system, the authors measured various GaAs MESFET sample tubes and HEMT devices developed and manufactured by Nanjing Institute of Electronic Devices. The low frequency noise of these devices has the following characteristics: (1) The low frequency noise of the device is related to the bias state and geometric parameters of the device. The equivalent input noise voltage increases with the absolute value of the source-drain current and the gate bias voltage With the gate length and gate width increases. And found that the power device noise is low. (2) GaAs MESFET low-frequency noise than Si devices. (3) The low-frequency noise spectrum of general devices is 1 / f ~ μ, where α = 11; and the GaAs MESFET’s α is between 0.5 and 2. (4) Low-frequency noise in HEMT devices is slightly larger than GaAs devices.