论文部分内容阅读
砷化镓双异质结(DH)激光器由于近年来在光导纤维通讯中成功的应用而受到极大的重视,但在推广时仍有可靠性和成品率不高的问题。为了进一步研究GaAs—Ga_(1-x)Al~xAs DH激光器退化问题,我们采用1000KV透射高压电子显微镜观察了模拟DH激光器液相外延工艺的GaAs/Ga_(1-x)Al_xiAs单异质结样品。在GaAs基片掺Te(3×10~(18)/cm~3)在(100)面上外延生长不掺杂的Ga_(1-x)Al_xAs层,其Al含量X值为小于0.5,外延层厚为6.4μm,外延温度为860℃,降温速率为1℃/min,母液与外延片脱离后约20分钟降至室温。为了确保观察的电镜样品的机械强度,我们采用光刻法在GaAs衬底面上开出直径为800μm的园形窗口,用H_2SO_4∶H_2O_2∶H_2O=1∶8∶1
Gallium arsenide double heterostructure (DH) lasers have drawn great attention due to their successful applications in optical fiber communications in recent years. However, the reliability and the yield of finished products are still low when they are promoted. In order to further study the degradation of GaAs-Ga_ (1-x) Al_AsAs DH lasers, we measured the GaAs / Ga_ (1-x) Al_xiAs single heterojunction samples simulated by liquid-phase epitaxy of DH laser using a transmission electron microscope . The Ga (1-x) Al_xAs layer is epitaxially grown on the (100) surface of a GaAs substrate doped with Te (3 × 10 18 / cm 3). The X value of the Al content is less than 0.5. The layer thickness is 6.4μm, the epitaxial temperature is 860 ℃, the cooling rate is 1 ℃ / min, and the mother liquid descends to room temperature after about 20 minutes from the epitaxial wafer. In order to ensure the mechanical strength of the observed electron microscopy samples, we used a photolithography method to produce a circular window with a diameter of 800 μm on the surface of GaAs substrate, using H 2 SO 4: H 2 O 2: H 2 O = 1: 8: 1