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在这篇论文中,我们提出一种适用于QCIF+解析度、262千色的薄膜电晶体液晶显示器,具有低靜态电流和晶片面积的源极驱动电路架构。此类驱动晶片可以实际被应用于行动电话或其他高阶可攜式电子产品上。传统A、B、C等三种形式的源极驱动电路,需使用大量的运算放大器来驱动面板中的画素,和较大阻值的电阻式数位类比转?电路来产生珈玛电压,以保有最低的靜态消耗电流。而我们提出的第四种源极驱动电路架构,仅使用二个运算放大器和较低电阻的电阻式数位类比转換电路,而且并不会增加靜态消耗电流。因此,这颗源极驱动晶片,不仅可省下晶片面积、增加产品竞<力,更可以降低靜态功率的消耗以延长电池的续航力。我们所提出的运算放大器和源极驱动电路之原型晶片,是利用3.3 V、0.35μmCMOS的制程技术来实现的.运算放大器电路的核心尺寸大小为100μm×50μm,源极驱动电路为400μm×650μm。由我们所提出的第四种驱动电路架构,晶片面积约可減少54.25 %,而靜态消耗电流仅需2.6 %。
In this paper, we propose a 262K color TFT LCD with QCIF + resolution, a source driver architecture with low quiescent current and wafer area. Such driver chips can actually be applied to mobile phones or other high-end portable electronic products. Traditional A, B, C and other three types of source driver circuit, the need to use a large number of op-amp to drive the pixels in the panel, and a larger resistance resistive digital analog converter circuit to generate gamma voltage in order to maintain The lowest static current consumption. And we propose the fourth source driver circuit architecture, using only two op amps and a lower resistance resistive digital analog conversion circuit, and does not increase the static current consumption. Therefore, this source driver chip, not only can save the chip area, increase product competitiveness, but also reduce the consumption of static power to extend battery life. The proposed prototype op-amp and source driver chips are fabricated using a 3.3 V CMOS process technology with a core size of 100 μm × 50 μm and a source driver circuit of 400 μm × 650 μm. The fourth driver architecture proposed by us reduces the chip area by approximately 54.25% while consuming only 2.6% of the quiescent current.