This paper proposes a double epi-layers 4H—SiC junction barrier Schottky rectifier(JBSR) with embedded P layer (EPL) in the drift region.The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process.The electric field and potential distribution are changed due to the buried P-layer,resulting in a high breakdown voltage(BV) and low specific on-resistance(R_(on,sp)).The influences of device parameters,such as the depth of the embedded P+ regions,the space between them and the doping concentration of the drift region,etc.,on BV and R_(on,sp) are investigated by simulations,which provides a particularly useful guideline for the optimal design of the device.The results indicate that BV is increased by 48.5%and Baliga’s figure of merit(BFOM) is increased by 67.9%compared to a conventional 4H-SiC JBSR. This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (R_ (on, sp)). The influences of device parameters, such as the depth of the embedded P + regions, the space between them and the doping concentration of the drift region, etc., on BV and R_ (on, sp) are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicates that BV is increased by 48.5% and Baliga’s figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H-SiC JBSR.