Constructing two-dimensional (2D) layered materials with traditional three-dimensional (3D) semiconductors into complex heterostructures has opened a new platform for the development of optoelectronic devices. Herein, large-area high performance self-driven photodetectors based on monolayer ${\mathrm{WS}}_2/\mathrm{GaAs}$ heterostructures were successfully fabricated with a wide response spectrum band ranging from the ultraviolet to near-infrared region. The detector exhibits an overall high performance, including high photoresponsivity of 65.58 A/W at 365 nm and 28.50 A/W at 880 nm, low noise equivalent power of $1.97\times {10}^{?15}\mathrm{W}/{\mathrm{Hz}}^{1/2}$, high detectivity of $4.47\times {10}^{12}\mathrm{Jones}$, and fast response speed of 30/10 ms. This work suggests that the ${\mathrm{WS}}_2/\mathrm{GaAs}$ heterostructure is promising in future novel optoelectronic device applications, and also provides a low-cost, easy-to-process method for the preparation of 2D/3D heterojunction-based devices.