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采用化学池沉积法，同时在３种衬底（载玻片、ＩＴＯ玻片、ＳｎＯ２玻片）上沉积ＣｄＳ薄膜，利用扫描电镜（ＳＥＭ）、透射光谱、Ｘ射线衍射（ＸＲＤ）和微电流高阻计等方法对沉积膜进行了测试分析，算出了ＣｄＳ薄膜的能隙宽度Ｅ０和电导激活能Ｅａ．结果表明：沉积膜表观均匀、密实，结晶取向性以ＳｎＯ２玻片衬底为佳；能隙宽度Ｅ０＝２．２３ｅＶ；电导激活能Ｅａ＝０．９２～１．０１ｅＶ．阐述了ＣｄＳ膜的生长沉积化学过程及机制
CdS thin films were deposited on the three kinds of substrates (glass slides, ITO slides and SnO2 slides) by chemical bath deposition method. Scanning electron microscopy (SEM), transmission spectroscopy, X-ray diffraction (XRD) Resistance and other methods to test the deposited film was analyzed and calculated CdS thin film energy gap width E0 and conductance activation energy Ea. The results show that the deposited film is uniform, dense and crystal orientation is SnO2 slide glass substrate. The energy gap width E0 is 2.23eV and the conductance activation energy Ea is 0.92 ~ 1.01eV. The chemical process and mechanism of CdS film growth and deposition are described