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利用射频反应溅射沉积方法在不同氧含量下以ＷＯ３／ＩＴＯ／Ｇｌａｓｓ为基体，制备了一系列厚度大于２００ｎｍ的ＴａＯｘ薄膜，并用Ａｒｎｏｌｄｕｓｓｅｎ方法检测离子导电性能。结果表明，当溅射功率为１５０Ｗ、氧含量１０～８０％条件下制备的ＴａＯｘ薄膜均为离子导体。其中氧含量２０—４０％时离子导电性能最佳。用ＴａＯｘ薄膜作为离子导体制备的Ａｌ／ＮｉＯｘ／ＴａＯｘ／ＷＯｘ／ＩＴＯ／Ｇｌａｓｓ电致变色器件，其着色态在可见光谱范围（０．３８—０．７８μｍ）的平均反射比为１１．２％，漂白态时对应的平均反射比可达８３．２％。本文还讨论了ＴａＯｘ离子导体的离子导电机理。
A series of TaOx thin films with a thickness greater than 200 nm were prepared by RF reactive sputtering deposition with WO3 / ITO / Glass under different oxygen contents. The ionic conductivity of the samples was measured by Arnoldussen method. The results show that the TaOx thin films prepared under the conditions of sputtering power of 150W and oxygen content of 10 ~ 80% are all ion conductors. The oxygen content of 20-40% when the ionic conductivity of the best. The Al / NiOx / TaOx / WOx / ITO / Glass electrochromic devices fabricated with TaOx films as ion conductors exhibited an average reflectance of 11.2% in the visible spectral range (0.38-0.78 μm) The corresponding average reflectance in bleaching state can reach 83.2%. The paper also discusses the ion conduction mechanism of TaOx ion conductor.